收藏本站
16 Mbit SPI Serial Flash
A Microchip Technology Company
SST25VF016B
Data Sheet
Instructions
Instructions are used to read, write (Erase and Program), and configure the SST25VF016B. The
instruction bus cycles are 8 bits each for commands (Op Code), data, and addresses. Prior to execut-
ing any Byte-Program, Auto Address Increment (AAI) programming, Sector-Erase, Block-Erase, Write-
Status-Register, or Chip-Erase instructions, the Write-Enable (WREN) instruction must be executed
first. The complete list of instructions is provided in Table 5. All instructions are synchronized off a high
to low transition of CE#. Inputs will be accepted on the rising edge of SCK starting with the most signif-
icant bit. CE# must be driven low before an instruction is entered and must be driven high after the last
bit of the instruction has been shifted in (except for Read, Read-ID, and Read-Status-Register instruc-
tions). Any low to high transition on CE#, before receiving the last bit of an instruction bus cycle, will
terminate the instruction in progress and return the device to standby mode. Instruction commands
(Op Code), addresses, and data are all input from the most significant bit (MSB) first.
Table 5: Device Operation Instructions
Address
Dummy
Data
Maximum
Instruction
Read
High-Speed
Description
Read Memory at 25 MHz
Read Memory at 80 MHz
Op Code Cycle 1
0000 0011b (03H)
0000 1011b (0BH)
Cycle(s) 2
3
3
Cycle(s)
0
1
Cycle(s)
1 to ?
1 to ?
Frequency
25 MHz
80 MHz
Read
4 KByte Sec-
Erase 4 KByte of
0010 0000b (20H)
3
0
0
80 MHz
tor-Erase 3
memory array
32 KByte
Erase 32 KByte block
0101 0010b (52H)
3
0
0
80 MHz
Block-Erase 4
of memory array
64 KByte
Erase 64 KByte block
1101 1000b (D8H)
3
0
0
80 MHz
Block-Erase 5
of memory array
Chip-Erase
Erase Full Memory Array
0110 0000b (60H)
0
0
0
80 MHz
or
1100 0111b (C7H)
Byte-Program
To Program One Data Byte 0000 0010b (02H)
3
0
1
80 MHz
AAI-Word-Pro- Auto Address Increment
1010 1101b (ADH)
3
0
2 to ?
80 MHz
gram 6
Programming
RDSR 7
EWSR
Read-Status-Register
Enable-Write-Status-Reg-
0000 0101b (05H)
0101b 0000b
0
0
0
0
1 to ?
0
80 MHz
80 MHz
ister
(50H)
WRSR
WREN
WRDI
RDID 8
Write-Status-Register
Write-Enable
Write-Disable
Read-ID
0000 0001b (01H)
0000 0110b (06H)
0000 0100b (04H)
1001 0000b (90H)
0
0
0
3
0
0
0
0
1
0
0
1 to ?
80 MHz
80 MHz
80 MHz
80 MHz
or
1010 1011b (ABH)
JEDEC-ID
JEDEC ID read
1001 1111b (9FH)
0
0
3 to ?
80 MHz
EBSY
Enable SO to output RY/BY# 0111 0000b (70H)
0
0
0
80 MHz
status during AAI program-
ming
DBSY
Disable SO as RY/BY#
1000 0000b (80H)
0
0
0
80 MHz
status during AAI program-
ming
T5.0 25044
1. One bus cycle is eight clock periods.
?2011 Silicon Storage Technology, Inc.
9
DS25044A
08/11
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SST25VF020-20-4C-QAE-T IC FLASH SER 2MB 20MHZ SPI 8WSON
SST25VF020B-80-4C-QAE-T IC FLASH SER 2MB 80MHZ SPI 8WSON
SST25VF032B-66-4I-S2AF IC FLASH SER 32M 66MHZ SPI 8SOIC
SST25VF040B-50-4C-ZAE IC FLASH SER 4MB 80MHZ SPI 8CSP
SST25VF040B-80-4I-QAE IC FLASH SER 4MB 80MHZ SPI 8WSON
SST25VF064C-80-4I-Q2AE-T IC FLASH SER 64M DUAL I/O 8WSON
SST25VF080B-80-4I-QAE-T IC FLASH SER 8MB 50MHZ SPI 8WSON
SST25VF512-20-4C-SAE-T IC FLASH SER 512K 20MHZ 8SOIC
相关代理商/技术参数
SST25VF016B-50-4C-S2AF-T OLD SST P/N 功能描述:闪存 16M (2Mx8) 50MHz 2.7-3.6V Commercial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF016B-50-4I-QAF 功能描述:闪存 16M (2Mx8) 50MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF016B-50-4I-QAF OLD SST P/N 功能描述:闪存 16M (2Mx8) 50MHz 2.7-3.6V Industrial RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF016B-50-4I-QAF-T 功能描述:闪存 2.7V to 3.6V 16Mbit SPI Serial 闪存 RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF016B-50-4I-QAF-T_ 制造商:Microchip Technology Inc 功能描述:
SST25VF016B-50-4I-S2A 制造商:Microchip Technology Inc 功能描述:Flash Memory 16 Mbit 50 MHz 8-SOIC
SST25VF016B-50-4I-S2AF 功能描述:闪存 16Mbit 50MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel
SST25VF016B-50-4I-S2AF OLD SST P/N 功能描述:闪存 16Mbit 50MHz RoHS:否 制造商:ON Semiconductor 数据总线宽度:1 bit 存储类型:Flash 存储容量:2 MB 结构:256 K x 8 定时类型: 接口类型:SPI 访问时间: 电源电压-最大:3.6 V 电源电压-最小:2.3 V 最大工作电流:15 mA 工作温度:- 40 C to + 85 C 安装风格:SMD/SMT 封装 / 箱体: 封装:Reel